P425 – 1″ UHV sputter deposition Argonne
Application
UHV sputter deposition system for thin film and multilayer deposition at 1″ substrates
Year of delivery
2015
Installation site
Argonne National Laboratory, Argonne, Illinois, USA
Design Features
- UHV magnetron sputter deposition system with confocal sputter up configuration.
- Up to eight 2″ magnetrons in confocal configuration.
- 2″ magnetrons with manual in situ tilting.
- All magnetrons with easy changeable magnetic system for use with ferromagentic or non-ferromagnetic target materials.
- Partly motorized 2 axes sample manipulator with integrated motorized sample shutter, RF Bias potential otion and maximal sample temperature above 700°C.
- Thickness sensor setup with manual translation stage for sputter rate check before deposition.
- Load lock chamber with manual transfer system.
- Integrated bake out system.
Special Features
- System is prepared to be added to a cluster tool via second transfer port at sputtering chamber.
- Reactive deposition possible.
Outer Dimensions
Technical specifications and performance values
General
Sputtering chamber
Size
700 mm diameter, about 625 mm height
Material
stainless steel
Load lock chamber
Size
sphere shape about 175 mm diameter
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 5 *10-9 mbar
Pump down time
30 minutes to < 10-7 mbar
Chamber pumping
Combined turbo pump and Titanium sublimation pumping stage, chamber lid differentially pumped by dry foreline pump
Bake out
< 150°C
Load lock chamber
Base pressure
< 10-8 mbar
Pump down time
45 minutes to < 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Manipulator features
Sputtering chamber
Sample size
diameter max. 1″ substrate
Motion axes
Motorized (continous) sample stage rotation
Motorized sample shutter (part of the manipulator head)
Temperatures
Room temperature (not stabilized) up to > 700°C at sample
Special features
Sample bias (RF or DC) is possible
Performance test results
Chamber pump down
