P376 – 2″ UHV sputter deposition IFW
Application
UHV sputter deposition system for thin film and multilayer deposition at 2″ substrates
Year of delivery
2013
Installation site
IFW, Dresden, Germany
Design Features
- UHV magnetron sputter deposition system with confocal sputter up configuration.
- Up to four 2″ magnetrons with manual in situ tilting.
- All magnetrons with easy changeable magnetic system for use with ferromagentic or non-ferromagnetic target materials.
- Fully motorized 2 axes sample manipulator with integrated sample shutter, DC Bias potential option and maximal sample temperature well above 800°C.
- Sample wedge shutter installed at chamber wall.
- Integrated bake out system.
Special Features
- Adding of moveable thickness monitor for sputter rate measurement before starting a deposition process possible.
- Adding of load lock chamber with heating lamp option possible.
- Adding of residual gas analyser system possible
- System is prepared to be added to a cluster tool via second transfer port at the sputtering chamber.
Outer Dimensions
Technical specifications and performance values
General
Sputtering chamber
Size
400 mm diameter, about 700 mm height
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 2 *10-9 mbar
Pump down time
1.25 hours to < 10-7 mbar
Chamber pumping
Turbo pumping stage, chamber lid differentially pumped by dry foreline pump
Bake out
< 150°C
Manipulator features
Sputtering chamber
Sample size
diameter max. 2″ substrate
Motion axes
2 motorized axes (manipulator z translation and (continous) rotation of the sample stage)
Pneumatic sample shutter (part of the manipulator head)
Temperatures
Room temperature (not stabilized) up to 1000°C at sample
Special features
DC bias potential option
Performance test results
Chamber pump down
Long time sample heating
