P331 – 3″ UHV e-beam deposition PTB
Application
UHV e-beam deposition system for thin film and multilayer deposition at 3″ substrates
Year of delivery
2012
Installation site
PTB, Braunschweig, Germany
Design Features
- UHV e-beam deposition system with ion source sample treatment and preparation.
- Linear multi pocket e-beam source.
- Manual pocket exchange.
- Thickness controller incl. software rate regulation and end point detection.
- Fully motorized 2 axes sample manipulator with integrated sample tempering between -150°C and +100°C.
- Ion source for sample precleaning, mild etching and plasma treatment.
- Residual gas analysis installed.
- Integrated bake out system.
Special Features
- Two chamber design to enable fast sample eschange without contamination of the evaporation material.
- Sample chamber with manipulator on top.
- E-Beam chamber below.
- Both chambers seperated by gate valve with deposition protection shield.
- Cryo shroud in both chambers leading to low and constant deposition pressure conditions.
Outer Dimensions
Technical specifications and performance values
General
Sample chamber
Size
400 mm diameter, about 350 mm height
Material
stainless steel
E-Beam chamber
Size
400 mm diameter, about 350 mm height
Material
stainless steel
Vacuum
Sample chamber
Base pressure
< 5 * 10-9 mbar
Pump down time
1 hour to < 10-6 mbar
Chamber pumping
Turbo pumping stage, chamber door differentially pumped by dry foreline pump
Bake out
< 150°C
E-Beam chamber
Base pressure
< 5 * 10-9 mbar
Pump down time
1 hour to < 10-6 mbar
Chamber pumping
Cryo pumping stage, chamber door differentially pumped by dry foreline pump
Bake out
< 150°C
Manipulator features
Sample chamber
Sample size
diameter max. 3″ substrate
Motion axes
2 motorized axes (manipulator tilting and (continous) sample stage rotation)
Temperatures
-150°C (not regulated) up to +100°C at sample
Sample preparation features
Sample chamber
Plasma treatment
Up to 5 * 10-4 mbar mbar partly ionised argon gas (using a griddless ion gun)
Ion beam etching /
sample precleaning
Wide range variation of ion source to sample distance
Wide range variation of ion energy and ion beam current
Dynamic oxydation pressure (regulation)
10-5 mbar up to 10 mbar (via upstream pressure regulation)
Performance test results
Chamber pump down
Sample tempering (cooling regime)
