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P339 – 8″ HV sputter deposition METU MEMS
Application
HV sputter deposition system for thin film and multilayer deposition at 8″ substrates
Year of delivery
2011
Installation site
METU MEMS, Ankara, Turkey
Design Features
- HV magnetron sputter deposition system with confocal sputter down configuration.
- Up to four 4″ magnetrons in confocal configuration.
- All magnetrons with pneumatic in situ tilting.
- Gas inlet close to the target at all sources.
- Fully motorized 2 axes sample manipulator with integrated heating stage for maximal sample temperature of 550°C.
- Ion source for sample precleaning and mild etching.
- Load lock chamber with storage.
- Automatic sample transfer between both chambers.
Special Features
- System is prepared for ion beam assisted deposition as well.
- Handling of different sample sizes (default: 4″, 6″, 8″) are possible using special sample adapters.
Outer Dimensions
Technical specifications and performance values
General
Sputtering chamber
Size
640 mm diameter, about 860 mm height
Material
stainless steel
Load lock chamber
Size
400 mm diameter, about 760 mm height
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 10-7 mbar
Pump down time
2.5 hours to < 10-6 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Load lock chamber
Base pressure
< 2 * 10-7 mbar
Pump down time
2 hours to < 5 * 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Manipulator features
Sputtering chamber
Sample size
diameter max. 8″ wafer
Motion axes
2 motorized axes (z tranlsation and (continous) sample stage rotation)
Temperatures
Room temperature (not stabilized) up to 550°C at sample
Load lock chamber
(Sample storage)
Storage size
10 sample holders
Sample size
diameter max. 8″ wafer
Motion axes
motorized z tranlsation
Sample preparation features
Sputtering chamber
Plasma treatment
Up to 5 * 10-4 mbar partly ionised argon gas (using a griddless ion gun)
Ion beam etching /
sample precleaning
Wide range variation of ion source to sample distance
Wide range variation of ion energy and ion beam current